EGAWA Takashi

写真a

Affiliation Department etc.

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering
Research Center for Nano-Device and next generation material

Title

Professor

Graduating School

  •  
    -
    1980.03

    Nagoya Institute of Technology   Faculty of Engineering   Graduated

Graduate School

  •  
    -
    1991.03

    Nagoya Institute of Technology  Graduate School, Division of Engineering  Doctor's Course  Completed

Degree

  • Nagoya Institute of Technology -  Master of Engineering

  • Nagoya Institute of Technology -  Doctor of Engineering

External Career

  • 1982.04
    -
    1988.03

      Researcher  

Field of expertise (Grants-in-aid for Scientific Research classification)

  • Electron device/Electronic equipment

 

Research Career

  • Heteroepitaxial growth on Si substrate and its application to devices

    Collaboration in Japan   (not selected)  

    Project Year:  1991.04  -  Now

  • Optoelectronic devices by use of GaN-based masterials

    Collaboration in Japan   (not selected)  

    Project Year:  1991.04  -  Now

Thesis for a degree

  • Heteroepitaxial Growth of GaAs on Si by MOCVD and Its Application to Optoelectronic Devices

    Takashi Egawa 

      1991.03  [Refereed]

    8   1

Papers

  • Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition

    Makoto Miyoshi, Mizuki Yamanaka, Takashi Egawa, Tetsuya Takeuchi

    J. Crystal Growth   506   40 - 44   2019.01  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Hydrogen induced quality improvement of GaNAs layers grown by chemical beam epitaxy

    Y. Sun, Z. Cheng, K. Sheng, Q. Zhou, Y. Sun, P. Chen, N. Zhuo, H. Wang, X. Yu, M. Heuken and T. Egawa

    J. Crys. Growth   500   11 - 14   2018.08  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Enhancement of breakdown voltage for fully-vertical GaN-on-Si p-n diode by using strained layer superlattice as drift layer

    S. Mase, T. Hamada, J. J. Freedsman and T. Egawa

    Semicond. Sci. Technol.   33   065017-1 - 065017-4   2018.05  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Challenges in growth for GaN power electronics

    J. J. Freedsman and T. Egawa

    J. Phys. D: Appl. Phys.   51   163001-12 - 163001-13   2018.03  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Distinct light emission from two-dimensional electron gas at a lattice-matched InAlN/AlGaN heterointerface

    Lei Lia, Daiki Hosomi, Yuta Miyachi, Makoto Miyoshi and Takashi Egawa

    Appl. Phys. Lett.   112 ( 10 ) 102102-1 - 102102-4   2018.03  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Defect observations of Ni/AlGaN/GaN Schottky contacts on Si substrates using scanning internal photoemission microscopy

    Kenji Shiojima, Hiroaki Konishi, Hiroyoshi Imadate, Yuya Yamaoka, Kou Matsumoto and Takashi Egawa

    Jpn. J. Appl. Phys   57 ( 4S ) 04FG07-1 - 04FG07-5   2018.02  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing

    Yijun Sun, Zhiyuan Cheng, Qiang Zhou, Ying Sun, Jiabao Sun, Yanhua Liu, Meifang Wang, Zhen Cao, Zhi Ye, Mingsheng Xu, Yong Ding, Peng Chen, Michael Heuken, Takashi Egawa

    J. Crystal Growth   483   190 - 194   2018.01  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

    Noriyuki Taoka, Toshiharu Kubo, Toshikazu Yamada, Takashi Egawa and Mitsuaki Shimizu

    Jpn. J. Appl. Phys.   57 ( 1S ) 01AD04-1 - 01AD04-5   2017.12  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Effect of Drift Layer on the Breakdown Voltage of Fully-Vertical GaN-on-Si p-n Diodes

    S. Mase, T. Hamada, J. J. Freedsman and T. Egawa

    IEEE Electron Device Lett.   38 ( 12 ) 1720 - 1723   2017.11  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Demonstration of full vertical GaN-on-Si Schottky diode

    K. Zhang, S. Mase, K. Nakamura, T. Hamada and T. Egawa

    Electron. Lett.   53 ( 24 ) 1610 - 1611   2017.11  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

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Books

  • Electronic Devices

    (Part: Single Author )

    Ohmsha Ltd.  1997.04

  • Ultrafast and Ultra-parallel Optoelectronics

    (Part: Multiple Authorship )

    Ohmsha Ltd.  1995.04

Presentations

  • Surface and Bulk Carrier Transports in Accumulation-mode GaN MOSFETs

    N. Taoka, N. H. Trung, H. Yamada, T. Takahashi, T. Yamada, T. Kubo, T. Egawa, and M. Shimizu

    49th IEEE Semiconductor Interface Specialists Conference  2018.12  -  2018.12 

  • Effects of Forming Gas Anneal on Electrical Properties of ALD-Al2O3/AlGaN/GaN MIS-HEMTs

    T. Kubo, K. Furuoka, M. Miyoshi, and T. Egawa

    49th IEEE Semiconductor Interface Specialists Conference  2018.12  -  2018.12 

  • Dynamic Variation of Carrier Transport Properties of Recessed Au-free Ohmic Contacts to InAlN/AlN/GaN on Si-wafer

    Takahiro Yoshida, and Takashi Egawa

    International Workshop on Nitride Semiconductors  2018.11  -  2018.11 

  • Effect of strained layer superlattice (SLS) on breakdown voltage of fully-vertical GaN p-n diodes on Si

    D. Biswas, N. Torii, K. Yamamoto and T. Egawa

    International Workshop on Nitride Semiconductors  2018.11  -  2018.11 

  • Effects of annealing ambient on ALD-Al2O3/AlGaN/GaN MIS-HEMTs

    T. Kubo, K. Furuoka, M. Miyoshi and T. Egawa

    International Workshop on Nitride Semiconductors  2018.11  -  2018.11 

  • MOCVD growth of 300-nm-thick epitaxial AlInN films on GaN/sapphire templates and free-standing GaN substrates

    Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa, Tetsuya Takeuchi

    International Workshop on Nitride Semiconductors  2018.11  -  2018.11 

  • Device characteristics of a novel AlGaN-channel HFET employing a quaternary AlGaInN barrier layer

    Daiki Hosomi, Keita Furuoka, Heng Chen, Toshiharu Kubo, Takashi Egawa, and Makoto Miyoshi

    International Workshop on Nitride Semiconductors  2018.11  -  2018.11 

  • Study on barrier thickness dependency of carrier transport property in InGaN/GaN MQW solar cells

    Hiroki Harada, Shinya Kato, Makoto Miyoshi, and Takashi Egawa

    International Workshop on Nitride Semiconductors  2018.11  -  2018.11 

  • Dependence of slow trap density at ALD-Al2O3/GaN interface on applied electric field

    N. Taoka, T. Kobayashi, M. Nakamura, A. Ohta, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, T. Kubo, T. Yamada, T. Egawa, S. Miyazaki, S. Motoyama, and M. Shimizu

    14th International Conference on Atomically Controlled Surface, Interfaces and Nanostructures  2018.10  -  2018.10 

  • Modulation of GaN MOS interface properties with excess ozone exposure during atomic layer deposition

    N. Taoka, T. Kobayashi, M. Nakamura, T. Sagawa, N. X. Truyen, A. Ohta, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, T. Kubo, T. Yamada, T. Egawa, S. Miyazaki, S. Motoyama and M. Shimizu

    2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices  2018.07  -  2018.07 

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Academic Awards Received

  • Award of the Laser Society of Japan

    1996.05.22    

  • Award of the Kodaira Memorial, Japan

    1991.06.18    

  • Award of the Institute of Electrical Engineers of Japan

    1991.05.23