EGAWA Takashi

写真a

Affiliation Department etc.

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering
Research Center for Nano-Device and next generation material

Title

Professor

Graduating School

  •  
    -
    1980.03

    Nagoya Institute of Technology   Faculty of Engineering   Graduated

Graduate School

  •  
    -
    1991.03

    Nagoya Institute of Technology  Graduate School, Division of Engineering  Doctor's Course  Completed

Degree

  • Nagoya Institute of Technology -  Master of Engineering

  • Nagoya Institute of Technology -  Doctor of Engineering

External Career

  • 1982.04
    -
    1988.03

      Researcher  

Field of expertise (Grants-in-aid for Scientific Research classification)

  • Electron device/Electronic equipment

 

Research Career

  • Heteroepitaxial growth on Si substrate and its application to devices

    Collaboration in Japan   (not selected)  

    Project Year:  1991.04  -  Now

  • Optoelectronic devices by use of GaN-based masterials

    Collaboration in Japan   (not selected)  

    Project Year:  1991.04  -  Now

Thesis for a degree

  • Heteroepitaxial Growth of GaAs on Si by MOCVD and Its Application to Optoelectronic Devices

    Takashi Egawa 

      1991.03  [Refereed]

    8   1

Papers

  • Effect of Drift Layer on the Breakdown Voltage of Fully-Vertical GaN-on-Si p-n Diodes

    S. Mase, T. Hamada, J. J. Freedsman and T. Egawa

    IEEE Electron Device Lett.   38 ( 12 )   2017.12  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Demonstration of full vertical GaN-on-Si Schottky diode

    K. Zhang, S. Mase, K. Nakamura, T. Hamada and T. Egawa

    Electron. Lett.   53 ( 24 ) 1610 - 1611   2017.11  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing

    T. Kubo and T. Egawa

    Semicond. Sci. Technol.   32   125016-1 - 125016-5   2017.11  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films

    L. Li, D. Hosomi, Y. Miyachi, T. Hamada, M. Miyoshi and T. Egawa

    Appl. Phys. Lett.   111 ( 10 ) 102106-1 - 102106-4   2017.09  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Analysis of carrier trapping and emission in AlGaN/GaN HEMT with bias-controllable field plate

    S. Mase, A. Wakejima and T. Egawa

    Phys. Status Solidi A   214 ( 8 ) 1600840-1 - 1600840-5   2017.06  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Post-deposition annealing effects on the insulator/semiconductor interfaces of Al2O3/AlGaN/GaN structures on Si substrates

    T. Kubo, M. Miyoshi and T. Egawa

    Semicond. Sci. Technol.   32   065012-1 - 065012-5   2017.05  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductor

    N. Taoka, T. Kubo, T. Yamada, T. Egawa, M. Shimizu

    Microelectronic Engineering   178   182 - 185   2017.05  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • An AlGaN/GaN field effect diode with a high turn-on voltage controllability

    N. Kato, A. Wakejima, Y. Osada, R. Kamimura, K. Itoh and T. Egawa

    Phys. Status Solidi A   214 ( 8 ) 1600830-1 - 1600830-4   2017.04  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Al2O3/AlGaN Channel Normally-Off MOSFET on Silicon With High Breakdown Voltage

    J. J. Freedsman, T. Hamada, M. Miyoshi and T. Egawa

    IEEE Electron Device Letters   38 ( 4 ) 497 - 500   2017.03  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Self-forming graphene/Ni patterns on sapphire utilizing the pattern-controlled catalyst metal agglomeration technique

    Makoto Miyoshi, Yukinori Arima, Toshiharu Kubo, and Takashi Egawa

    Appl. Phys. Lett.   110 ( 1 ) 013103-1 - 013103-4   2017.01  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

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Books

  • Electronic Devices

    (Part: Single Author )

    Ohmsha Ltd.  1997.04

  • Ultrafast and Ultra-parallel Optoelectronics

    (Part: Multiple Authorship )

    Ohmsha Ltd.  1995.04

Presentations

  • Relationships between Al2O3/GaN Interface Properties near Conduction Band Edge and Post-Deposition Annealing Temperatures

    N. Taoka, T. Kobayashi, M. Nakamura, T. Sagawa, N. X. Truyen, A. Ohta, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, T. Kubo, T. Yamada, T. Egawa, S. Miyazaki, S. Motoyama, and M. Shimizu

    48th IEEE Semiconductor Interface Specialists Conference (SISC 2017)  2017.12  -  2017.12 

  • ESR studies of layer thickness and post-deposition annealing effects on ALD-Al2O3/AlGaN/GaN MIS-HEMT structures

    T. Kubo and T. Egawa

    48th IEEE Semiconductor Interface Specialists Conference (SISC 2017)  2017.12  -  2017.12 

  • Damage evaluation by High selective dry etching of GaN over AlGaN

    Y. Osada, K. Furuta, R. Kamimura, T. Narita, A. Wakejima and T. Egawa

    39th International Symposium on Dry Process  2017.11  -  2017.11 

  • Performance improvements of AlGaN deep ultraviolet light emitter via a 20-nm-thick n-AlGaN underlying layer

    L.Li, Y. Miyachi, T. Tsutsumi, M. Miyoshi, and T.Egawa

    International Workshop on UV Materials and Devices (IWUMD 2017)  2017.11  -  2017.11 

  • Device design for avalanche operation of solar-blind AlGaN-based PiN type UV photodiodes

    M. Okada, Y. Miyachi, M. Miyoshi, and T. Egawa

    International Workshop on UV Materials and Devices (IWUMD 2017)  2017.11  -  2017.11 

  • Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically-smooth heterointerface

    D. Hosomi, Y. Miyachi, T. Egawa and M. Moyoshi

    2017 International Conference on Solid State Devices and Materials  2017.09  -  2017.09 

  • Defect Observations of Ni/AlGaN/GaN Schottky Contacts on Si Subtrates Using Scanning Internal Photoemission Microscopy

    K. Shiojima, H. Konishi, H. Imadate, Y. Yamaoka, K. Matsumoto and T. Egawa

    2017 International Conference on Solid State Devices and Materials  2017.09  -  2017.09 

  • Characteristics of Normally-off AlGaN/GaN MIS-HEMTs with Low Temperature Annealed Au-free Metal Stacks

    T. Yoshida and T. Egawa

    2017 E-MRS Fall Meeting  2017.09  -  2017.09 

  • Influence of growth pressure of carbon-doped GaN layer in AlGaN/GaN high-electron-mobility transistors on Si substrate

    Y. Yamaoka, H. Kimura, A. Ubukata, T. Tabuchi, K. Matsumoto and T. Egawa

    12th Topical Workshop on Heterostructure Microelectronics  2017.08  -  2017.08 

  • AlGaN/GaN Field-Effect Diode for High Frequency Rectification

    Y. Ito, Y. Ikedo, N. Kato, J. Sumino, T. Egawa, R. Kamimura, Y. Osada, K. Ito and A. Wakejima

    12th Topical Workshop on Heterostructure Microelectronics  2017.08  -  2017.08 

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Academic Awards Received

  • Award of the Laser Society of Japan

    1996.05.22    

  • Award of the Kodaira Memorial, Japan

    1991.06.18    

  • Award of the Institute of Electrical Engineers of Japan

    1991.05.23