EGAWA Takashi

写真a

Affiliation Department etc.

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering
Research Center for Nano-Device and next generation material

Title

Professor

Graduating School

  •  
    -
    1980.03

    Nagoya Institute of Technology   Faculty of Engineering   Graduated

Graduate School

  •  
    -
    1991.03

    Nagoya Institute of Technology  Graduate School, Division of Engineering  Doctor's Course  Completed

Degree

  • Nagoya Institute of Technology -  Master of Engineering

  • Nagoya Institute of Technology -  Doctor of Engineering

External Career

  • 1982.04
    -
    1988.03

      Researcher  

Field of expertise (Grants-in-aid for Scientific Research classification)

  • Electron device/Electronic equipment

 

Research Career

  • Heteroepitaxial growth on Si substrate and its application to devices

    Collaboration in Japan   (not selected)  

    Project Year:  1991.04  -  Now

  • Optoelectronic devices by use of GaN-based masterials

    Collaboration in Japan   (not selected)  

    Project Year:  1991.04  -  Now

Thesis for a degree

  • Heteroepitaxial Growth of GaAs on Si by MOCVD and Its Application to Optoelectronic Devices

    Takashi Egawa 

      1991.03  [Refereed]

    8   1

Papers

  • Observation of reaction between a-type dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice after dislocation propagation

    Y. Sugawara, Y. Ishikawa, A. Watanabe, M. Miyoshi and T. Egawa

    J. Crystal Growth     2016.11  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Novel fully vertical GaN p-n diode on Si substrate grown by metalorganic chemical vapor deposition

    S. Mase, Y. Urayama, T. Hamada, J. J. Freedsman and T. Egawa

    Appl. Phys. Express   9   111005-1 - 111005-4   2016.10  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Enhanced Emission Efficiency of Deep Ultraviolet Light-Emitting AlGaN Multiple Quantum Wells Grown on an N-AlGaN Underlaying Layer

    L. Li, Y. Miyachi, M. Miyoshi and T. Egawa

    IEEE Photonics Journal   8 ( 5 ) 1601710   2016.10  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Modeling of the wafer bow in GaN-on-Si epiwafers employing GaN/AlN multilayer buffer structures

    M. Miyoshi, A. Watanabe and T. Egawa

    Semicond. Sci. Technol.   31 ( 10 ) 105016-1 - 105016-7   2016.09  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors

    M. Miyoshi, T. Tsutsumi, G. Nishino, Y. Miyachi, M. Okada and T. Egawa

    J. Vac. Sci. Technol. B   34 ( 5 ) 050602-1 - 050602-4   2016.08  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Improved performance of InGaN/GaN multilayer solar cells with an atomic-layer-deposited Al2O3 passivation film

    M. Miyoshi, T. Kabata, T. Tsutsumi, T. Mori, M. Kato, T. Egawa

    Electronics Letters   52 ( 14 ) 1246 - 1248   2016.07  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Analysis of reaction between c+a and –c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

    Yoshihiro Sugawara, Yukari Ishikawa, Arata Watanabe, Makoto Miyoshi and Takashi Egawa

    AIP Advances   6 ( 4 ) 045020-1 - 045020-7   2016.04  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Characterization of dislocations in GaN layer grown on 4-inch Si(111) with AlGaN/AlN strained layer superlattices

    Yoshihiro Sugawara, Yukari Ishikawa, Arata Watanabe, Makoto Miyoshi and Takashi Egawa

    Jpn. J. Appl. Phys.   55   05FB08-1 - 05FB08-6   2016.04  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Influence of barrier height and p-cladding layer on electroluminescent performance of AlGaN deep ultraviolet light-emitting diodes

    S. Tan, T. Egawa, X. D. Luo, L. Sun, Y. H. Zhu and J. C. Zhang

    J. Phys. D: Appl. Phys.   49   125102-1 - 125102-5   2016.02  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

    Arata Watanabe, Joseph J. Freedsman, Yuya Urayama, Dennis Christy and Takashi Egawa

    J. Appl. Phys   118   235705-1 - 235705-6   2015.12  [Refereed]

    Research paper (scientific journal)   Single Author

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Books

  • Electronic Devices

    (Part: Single Author )

    Ohmsha Ltd.  1997.04

  • Ultrafast and Ultra-parallel Optoelectronics

    (Part: Multiple Authorship )

    Ohmsha Ltd.  1995.04

Presentations

  • DC-AC inverter with heterodyne technique and GaN power device

    H. Jonokuchi, T. Egawa, M. Iwasaki and T. Kosaka

    IEEE INTERNATIONAL CONFERENCE ON POWER ELECTRONICS,DRIVES AND ENERGY SYSTEMS (PEDES2016)  2016.12  -  2016.12 

  • Large Surface Potential Fluctuation at ALD-Al2O3/GaN MOS Interfaces

    N. Taoka, T. Kubo, T. Yamada, T. Egawa and M. Shimizu

    47th IEEE Semiconductor Interface Specialists Conference (SISC 2016)  2016.12  -  2016.12 

  • Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 and HfO2 fabricated by atomic layer deposition

    T. Kubo and T. Egawa

    47th IEEE Semiconductor Interface Specialists Conference (SISC 2016)  2016.12  -  2016.12 

  • Progress in device and epitaxial growth of GaN-on-Si power device

    T. Egawa  [Invited]

    International Technology Transfer Convention & International Forum on Wide Bandgap Semiconductors (IFWS 2016)  2016.11  -  2016.11 

  • Distortion in Difference Frequency Under Two-Tone Signal Input Evaluated with Volterra Series Analysis

    K. Tamesue, T. Egawa and A. Wakejima

    38th IEEE COMPOUND SEMICONDUCTOR IC (CSIC) SYMPOSIUM  2016.10  -  2016.10 

  • Heteroepitaxial Growth of GaN-on-Si and Power Device Applications

    T. Egawa  [Invited]

    International Workshop on Nitride Semiconductors (IWN2016)  2016.10  -  2016.10 

  • An AlGaN/GaN Field Effect Diode with a High Turn-On Votage

    N. Kato, T. Nagai, A. Wakejima Y. Osada, R. Kamiyama, K. Itou and T. Egawa

    International Workshop on Nitride Semiconductors (IWN2016)  2016.10  -  2016.10 

  • Impact of crystal quality of AlN nucleation layer on the vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures

    Yuya Yamaoka, Akinori Ubukata, Yoshiki Yano, Toshiya Tabuchi, Koh Matsumoto and Takashi Egawa

    International Workshop on Nitride Semiconductors (IWN2016)  2016.10  -  2016.10 

  • Analysis of Carrier Trapping and Emission in AlGaN/GaN HEMT with Bias-Controllable Filed Plate

    S. Mase, A. Wakejima, and T. Egawa

    International Workshop on Nitride Semiconductors (IWN2016)  2016.10  -  2016.10 

  • Perspectives of Epitaxial Growth of GaN-on-Si and Power Device Applications

    Takashi Egawa  [Invited]

    2016 E-MRS Fall Meeting  2016.09  -  2016.09 

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Academic Awards Received

  • Award of the Laser Society of Japan

    1996.05.22    

  • Award of the Kodaira Memorial, Japan

    1991.06.18    

  • Award of the Institute of Electrical Engineers of Japan

    1991.05.23