EGAWA Takashi

写真a

Affiliation Department etc.

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering
Research Center for Nano-Device and next generation material

Title

Professor

Graduating School

  •  
    -
    1980.03

    Nagoya Institute of Technology   Faculty of Engineering   Graduated

Graduate School

  •  
    -
    1991.03

    Nagoya Institute of Technology  Graduate School, Division of Engineering  Doctor's Course  Completed

Degree

  • Nagoya Institute of Technology -  Master of Engineering

  • Nagoya Institute of Technology -  Doctor of Engineering

External Career

  • 1982.04
    -
    1988.03

      Researcher  

Field of expertise (Grants-in-aid for Scientific Research classification)

  • Electron device/Electronic equipment

 

Research Career

  • Heteroepitaxial growth on Si substrate and its application to devices

    Collaboration in Japan   (not selected)  

    Project Year:  1991.04  -  Now

  • Optoelectronic devices by use of GaN-based masterials

    Collaboration in Japan   (not selected)  

    Project Year:  1991.04  -  Now

Thesis for a degree

  • Heteroepitaxial Growth of GaAs on Si by MOCVD and Its Application to Optoelectronic Devices

    Takashi Egawa 

      1991.03  [Refereed]

    8   1

Papers

  • GaN/InGaN gate for E-mode GaN HEMTs on Si

    D. Biswas, T. Tsuboi and T. Egawa

    IEEE EDL     2020.12  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Mass production-ready characteristics of AlGaN/AlN/GaN high-electron-mobility transistor structures grown on 200-mm-diameter silicon substrates using metal-organic chemical vapor deposition

    K. Ikejiri, Y. Hiroyama, K. Kasahara, C. Hirooka, T. Osada, M. Tanaka, T. Takada and T. Egawa

    Semicond. Sci. Technol.     2020.10

    Research paper (scientific journal)   Multiple Authorship

  • Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures

    P. Dalapati, S. Urata, T. Egawa

    Superlattices and Microstructures   147   106709-1 - 106709-10   2020.09  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to c-plane GaN on sapphire by metalorganic chemical vapor deposition

    M. Miyoshi, T. Nakabayashi, M. Yamanaka, T. Egawa and T. Takeuchi

    J. Vac. Sci. Technol. B   38 ( 5 ) 052205-1 - 052205-5   2020.09  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Current-induced degradation process in (In)AlGaN-based deep-UV light-emitting diode fabricated on AlN/sapphire template

    Pradip Dalapati, KosukeYamamoto, Takashi Egawa, Makoto Miyoshi

    Optical Materials   109   110352-1 - 110352-6   2020.08  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • MOCVD growth of over 150-nm-thick quaternary AlGaInN epitaxial films near alloy compositions lattice-matching to GaN on sapphire and their structural and optical characterization

    M. Miyoshi, H. Harada, T. Egawa and T. Takeuchi

    Physica Status Solidi A     1900597-1 - 1900597-6   2019.10  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator

    Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa and Makoto Miyoshi

    J. Vac. Sci. Technol. B   37 ( 4 ) 041205-1 - 041205-4   2019.07  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 fabricated by atomic layer deposition

    Toshiharu Kubo and Takashi Egawa

    Physica B: Condensed Matter   571   210 - 212   2019.07  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si

    Debaleen Biswas, Hirotaka Fujita, Naoki Torii and Takashi Egawa

    J. Appl. Phys.   125 ( 22 ) 225707-1 - 225707-6   2019.06  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • A 300 nm thick epitaxial AlInN film with a highly flat surface grown almost perfectly lattice-matched to c-plane free-standing GaN substrate

    M. Miyoshi, M. Yamanaka, T. Egawa and T. Takeuchi

    Jpn. J. Appl. Phys.   58   SC1006-1 - SC1006-4   2019.04  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

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Books

  • Electronic Devices

    (Part: Single Author )

    Ohmsha Ltd.  1997.04

  • Ultrafast and Ultra-parallel Optoelectronics

    (Part: Multiple Authorship )

    Ohmsha Ltd.  1995.04

Presentations

  • Effect of crystal quality of Ni metal catalyst on electrical properties of transfer-free graphene FETs

    Motoki Kobayashi, Bilguun Dorjdagva, Toshiharu Kubo, Makoto Miyoshi, and Takashi Egawa

    13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/14th International Conference on Plasma-Nano Technology & Science  2020.03  -  2020.03 

  • Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double-layer insulators fabricated by atomic layer deposition

    Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, and Takashi Egawa

    13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/14th International Conference on Plasma-Nano Technology & Science  2020.03  -  2020.03 

  • Recent Progress in GaN-on-Si Based Fully-vertical p-n Diode

    D. Biswas, N. Torii, K. Yamamoto and T. Egawa  [Invited]

    The 9th International Conference on Electronics, Communications and Networks (CECNet 2019)  2019.10  -  2019.10 

  • Estimation of post-deposition annealing effects on electrical properties of ALD-SiO2/AlGaN/GaN MIS-HEMTs

    S. Yokoi, T. Kubo and T. Egawa

    2019 International Conference on Solid State Devices and Materials (SSDM 2019)  2019.09  -  2019.09 

  • Effects of forming gas annealing depending on gate electrode materials in ALD-Al2O3/AlGaN MIS-HEMT

    N. Yoshida, K. Furuoka, T. Kubo and T. Egawa

    13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)  2019.08  -  2019.08 

  • Reduction in ohmic contact resistance for AlGaN-channel HFETs with a quaternary AlGaInN barrier layers

    S. Saito, D. Hosomi, K. Furuoka, H. Chen, T. Kubo, T. Egawa and M. Miyoshi

    13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)  2019.08  -  2019.08 

  • MOCVD growth of ε-Ga2O3 thin films on Si(111) substrate with AlN buffer

    Z. Chen, W. Chen, T. Egawa and G. Wang

    The 3rd International Workshop on Gallium Oxide and Other Related Materials (IWGO-3)  2019.08  -  2019.08 

  • Fabrication and Characterization of First GaN-on-Si Based Vertical MOSFETs

    D. Biswas, N. Torii, K. Yamamoto and T. Egawa

    13th International Conference on Nitride Semiconductors (ICNS 13)  2019.07  -  2019.07 

  • Demonstration of a Fully-Vertical GaN MOSFET on Si

    Debaleen Biswas, Naoki Torii, Keiji Yamamoto, and Takashi Egawa

    Compound Semiconductor Week 2019  2019.05  -  2019.05 

  • Growth and characterization of quaternary AlGaInN epitaxial films with alloy compositions around lattice-matched to GaN

    Hiroki Harada, Makoto Miyoshi, Takashi Egawa, and Tetsuya Takeuchi

    Compound Semiconductor Week 2019  2019.05  -  2019.05 

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Academic Awards Received

  • Award of the Laser Society of Japan

    1996.05.22    

  • Award of the Kodaira Memorial, Japan

    1991.06.18    

  • Award of the Institute of Electrical Engineers of Japan

    1991.05.23