MIYOSHI Makoto

写真a

Affiliation Department etc.

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering
Research Center for Nano-Device and next generation material

Title

Professor

Mail Address

E-mail address

Research Fields, Keywords

-

Graduating School

  • 1986.04
    -
    1990.03

    Osaka University   Faculty of Engineering Science   Graduated

Graduate School

  • 1990.04
    -
    1992.03

    Osaka University  Graduate School, Division of Engineering Science  Master's Course  Completed

External Career

  • 2011.03
    -
    2012.01

    Shin-Etsu Handotai Co., Ltd.   Isobe R&D Center   Chief Researcher  

  • 1992.04
    -
    2011.02

    NGK Insulators, Ltd.   Corporate R&D   Chief Researcher  

Field of expertise (Grants-in-aid for Scientific Research classification)

  • Electronic materials/Electric materials

  • Electron device/Electronic equipment

  • Applied materials

  • Crystal engineering

 

Thesis for a degree

  • Study on MOVPE growth of III-nitrides heteroepitaxial films and their application to electronic devices

    Makoto Miyoshi 

      2006.03  [Refereed]

    8   1

Papers

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Presentations

  • Device design for avalanche operation of solar-blind AlGaN-based PiN type UV photodiodes

    Mayuko Okada, Yuta Miyachi, Makoto Miyoshi, and Takashi Egawa

    IWUMD2017  (Kyushu University)  2017.11  -  2017.11 

  • Performance improvements of AlGaN deep ultraviolet light emitter via a 20-nm-thick n-AlGaN underlying layer

    Lei Li, Yuta Miyachi, Tatsuya Tsutsumi, Makoto Miyoshi, and Takashi Egawa

    IWUMD2017  (Kyushu University)  2017.11  -  2017.11 

  • Improved electron mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically-smooth heterointerface

    Daiki Hosomi, Yuta Miyachi, Takashi Egawa, and Makoto Miyoshi

    SSDM2017  (Sendai International Center)  2017.09  -  2017.09 

  • Field-effect UV photo transistors based-on nearly lattice-matched InAlN/AlGaN heterostructures

    Daiki Hosomi, Mayuko Okada, Lei Li, Takashi Egawa, and Makoto Miyoshi

    2017.09  -  2017.09 

  • Fabrication of p-down structure InGaN/GaN MQW solar cells by MOCVD

    Takuma Mori, Koki Harada, Makoto Miyoshi, and Takashi Egawa

    2017.09  -  2017.09 

  • Crystal evaluation for AlGaN-channel 2DEG heterostructures

    Daiki Hosomi, Takashi Egawa, and Makoto Miyoshi

    2017.09  -  2017.09 

  • PL lifetime measurement for AlGaN epitaxial films via plasma etching treatment and Al2O3-ALD process

    Riku Nakashima, Takuma Mori, Daiki Hosomi, Takashi Egawa and Makoto Miyoshi

    2017.09  -  2017.09 

  • Nearly lattice-matched InAlN/AlGaN 2DEG heterostructures and filed-effect transistors for high power applications

    Makoto Miyoshi, Daiki Hosomi, Mayuko Okada, Riku Nakashima, Joseph J. Freedsman, and Takashi Egawa

    ICNS2017  (Strasbouug, France)  2017.07  -  2017.07 

  • High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films

    Lei Li, Daiki Hosomi, Makoto Miyoshi, and Takashi Egawa

    ICNS2017  (Strasbourg, France)  2017.07  -  2017.07 

  • Influence of underlying substrates on material and device properties of MOCVD-grown InGaN/GaN MQW solar cells

    Makoto Miyoshi, Miki Ohta, Takuma Mori, and Takashi Egawa

    ICNS2017  (Strasbourg, France)  2017.07  -  2017.07 

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