MIYOSHI Makoto

写真a

Affiliation Department etc.

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering
Research Center for Nano-Device and next generation material

Title

Professor

Mail Address

E-mail address

Research Fields, Keywords

-

Graduating School

  • 1986.04
    -
    1990.03

    Osaka University   Faculty of Engineering Science   Graduated

Graduate School

  • 1990.04
    -
    1992.03

    Osaka University  Graduate School, Division of Engineering Science  Master's Course  Completed

External Career

  • 2011.03
    -
    2012.01

    Shin-Etsu Handotai Co., Ltd.   Isobe R&D Center   Chief Researcher  

  • 1992.04
    -
    2011.02

    NGK Insulators, Ltd.   Corporate R&D   Chief Researcher  

Field of expertise (Grants-in-aid for Scientific Research classification)

  • Electronic materials/Electric materials

  • Electron device/Electronic equipment

  • Applied materials

  • Crystal engineering

 

Thesis for a degree

  • Study on MOVPE growth of III-nitrides heteroepitaxial films and their application to electronic devices

    Makoto Miyoshi 

      2006.03  [Refereed]

    8   1

Papers

display all >>

Presentations

  • High-quality AlInN films grown by MOCVD with film thicknesses up to 500 nm

    Mizuki Yamanaka, Makoto miyoshi, Takashi Egawa, Tetsuya Takeuchi

    ICMOVPE XIX  (Nara Kasugano International Forum 甍 IRAKA)  2018.06  -  2018.06 

  • A novel AlGaN-channel 2DEG heterostructure employing a quaternary InAlGaN barrier layer and its thermal stability of 2DEG properties

    Daiki Hosomi, Heng Chen, Takashi Egawa, and Makoto Miyoshi

    ICMOVPE XIX  (Nara Kasugano International Forum 甍 IRAKA)  2018.06  -  2018.06 

  • InGaN/GaN MQW solar cells grown by MOCVD with spectral response extending out to 540 nm

    Hiroki Harada, Takuma Mori, Bilguun Dorjdagva, Shinya Kato, Makoto Miyoshi, and Takashi Egawa

    ICMOVPE XIX  (Nara Kasugano International Forum 甍 IRAKA)  2018.06  -  2018.06 

  • Device design for avalanche operation of solar-blind AlGaN-based PiN type UV photodiodes

    Mayuko Okada, Yuta Miyachi, Makoto Miyoshi, and Takashi Egawa

    IWUMD2017  (Kyushu University)  2017.11  -  2017.11 

  • Performance improvements of AlGaN deep ultraviolet light emitter via a 20-nm-thick n-AlGaN underlying layer

    Lei Li, Yuta Miyachi, Tatsuya Tsutsumi, Makoto Miyoshi, and Takashi Egawa

    IWUMD2017  (Kyushu University)  2017.11  -  2017.11 

  • Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically-smooth heterointerface

    Daiki Hosomi, Yuta Miyachi, Takashi Egawa, and Makoto Miyoshi

    SSDM2017  (Sendai International Center)  2017.09  -  2017.09 

  • Field-effect UV photo transistors based-on nearly lattice-matched InAlN/AlGaN heterostructures

    Daiki Hosomi, Mayuko Okada, Lei Li, Takashi Egawa, and Makoto Miyoshi

    2017.09  -  2017.09 

  • Fabrication of p-down structure InGaN/GaN MQW solar cells by MOCVD

    Takuma Mori, Koki Harada, Makoto Miyoshi, and Takashi Egawa

    2017.09  -  2017.09 

  • Crystal evaluation for AlGaN-channel 2DEG heterostructures

    Daiki Hosomi, Takashi Egawa, and Makoto Miyoshi

    2017.09  -  2017.09 

  • PL lifetime measurement for AlGaN epitaxial films via plasma etching treatment and Al2O3-ALD process

    Riku Nakashima, Takuma Mori, Daiki Hosomi, Takashi Egawa and Makoto Miyoshi

    2017.09  -  2017.09 

display all >>