KUBO Toshiharu

写真a

Affiliation Department

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering
Research Center for Nano-Device and next generation material

Title

Associate Professor

External Link

Degree

  • Doctor(Engineering) ( 2005.05   Keio University )

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment  / Electronic device

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials  / Electronic device

  • Nanotechnology/Materials / Applied physical properties

From School

  • Keio University   Faculty of Science and Engineering   Department of applied physics and physico-informatics   Graduated

    1995.04 - 1999.03

      More details

    Country:Japan

From Graduate School

  • Keio University   Graduate School, Division of Science and Engineering   School of Fundamental Science and Technology   Doctor's Course   Completed

    1999.04 - 2005.05

      More details

    Country:Japan

External Career

  • The University of Tokyo   School of Engineering   Part-time researcher for university or other academic organization

    2005.10 - 2008.12

      More details

    Country:Japan

  • Hokkaido University   Research Center for Integrated Quantum Electronics   Part-time researcher for university or other academic organization

    2008.12 - 2010.03

      More details

    Country:Japan

Professional Memberships

  • 電子情報通信学会電子デバイス研究会

    2018.04

  • 応用物理学会応用電子物性分科会

    2014.04

  • 日本応用物理学会

    2009.12

Qualification Acquired

  • Person in Charge of High-pressure Gas Production Security (chemical machinery and frozen machine)

 

Research Career

  • Electronic states at insulator/GaN interface

    The Other Research Programs  

    Project Year: 2010.04

     More details

    electronic properties at the insulator/GaN interface are investigated.

  • Surface properties of AlGaN layers with high Al compositions

    The Other Research Programs  

    Project Year: 2008.12 - 2010.03

     More details

    Surface properties of AlGaN layers with high Al compositions were studied.

  • Improvement of carbon compounds by fast neutron irradiation

    The Other Research Programs  

    Project Year: 2005.10 - 2008.12

     More details

    Improvement of physical properties of fullerene superconductor by fast neutron irradiation was studied.

  • Study on the electrical conductivity of Graphite

    The Other Research Programs  

    Project Year: 1998.04 - 2005.10

Papers

  • Improved field-effect mobility in transfer-free graphene films synthesized via the metal agglomeration technique using high-crystallinity Ni catalyst films Reviewed

    Toshiharu Kubo, Akira Takahashi, Makoto Miyoshi, Takashi Egawa

    Applied Physics Express   14   116503   2021.10

     More details

    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOPscience  

    DOI: 10.35848/1882-0786/ac30ed

  • Bias-controlled photocurrent generation process in GaN-based ultraviolet p–i–n photodetectors fabricated with a thick Al2O3 passivation layer Reviewed

    PradipDalapati, KosukeYamamoto, ToshiharuKubo, TakashiEgawa, MakotoMiyoshi

    Optik   245   167691   2021.07

     More details

    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Elsevier  

    DOI: 10.1016/j.ijleo.2021.167691

  • High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator Reviewed International journal

    Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, and Makoto Miyoshi

    Journal of Vacuum Science & Technology B   37   041205-1 - 041205-4   2019.07

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 fabricated by atomic layer deposition Reviewed International journal

    Toshiharu Kubo, Takashi Egawa

    Physica B   571   210 - 212   2019.07

     More details

    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  • Trap state characterization of Al2O3/AlInGaN/GaN metal-insulator-semiconductor heterostructures Reviewed International journal

    Debaleen Biswas, Naoki Torii, Hirotaka Fujita, Takahiro Yoshida, Toshiharu Kubo and Takashi Egawa

    Semiconductor Science and Technology   34   055014-1 - 055014-6   2019.04

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Experimental evidence of the existence of multiple charged states at Al2O3/GaN interfaces Reviewed International journal

    Noriyuki Taoka, Toshiharu Kubo, Toshikazu Yamada, Takashi Egawa and Mitsuaki Shimizu

    Semiconductor science and Technology   34   025009-1 - 025009-7   2019.01

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties Reviewed

    N. Taoka, T. Kubo, T. Yamada, T. Egawa, M. Shimizu

    Jpn. J. Appl. Phys.   57   01AD04-1 - 01AD04-5   2017.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing Reviewed International journal

    Toshiharu Kubo, Takashi Egawa

    Semiconductor Science and Technology   32   125016-1 - 125016-5   2017.11

     More details

    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  • Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductor Reviewed International journal

    N. Taoka, T. Kubo, T. Yamada, T. Egawa, M. Shimizu

    Microelectronic Engineering   178   182 - 185   2017.06

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Post-deposition annealing effects on the insulator/semiconductor interfaces of Al2O3/AlGaN/GaN structures on Si substrates Reviewed International journal

    T. Kubo, M. Miyoshi, T. Egawa

    Semiconductor Science and Technology   32   065012-1 - 065012-5   2017.05

     More details

    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

display all >>

Presentations

  • リセス構造形成後表面処理を施したAlGaN/GaN MIS-HEMTの電気特性評価

    戸田圭太郎, 久保俊晴, 江川孝志

    電子情報通信学会11月研究会  2022.11  電子情報通信学会

     More details

    Event date: 2022.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ウィンクあいち + オンライン   Country:Japan  

  • Transfer-free graphene synthesis utilizing the agglomeration phenomenon of the Ni pattern Invited International conference

    2022.10 

     More details

    Event date: 2022.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Busan + Online   Country:Korea, Republic of  

  • 極微細構造を有するNiパターンの凝集現象を用いたサファイア基板上転写フリーグラフェン膜の作製

    加藤一朗, 久保俊晴, 三好実人, 江川孝志

    第83回応用物理学会秋季学術講演会  2022.09 

     More details

    Event date: 2022.09

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東北大学 + オンライン   Country:Japan  

  • AlGaN/GaN MIS-HEMTにおけるリセス構造形成後表面処理の効果

    戸田圭太郎, 久保俊晴, 江川孝志

    第83回応用物理学会秋季学術講演会  2022.09  日本応用物理学会

     More details

    Event date: 2022.09

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学 + オンライン   Country:Japan  

  • ALD により成膜したSiO2/Al2O3 2 層絶縁膜を用いたノーマリーオフ型AlGaN/GaN MIS-HEMT の電気特性Ⅱ

    戸田圭太郎, 久保俊晴, 江川孝志

    第69回応用物理学会春季学術講演会  2022.03  日本応用物理学会

     More details

    Event date: 2022.03

    Language:Japanese   Presentation type:Poster presentation  

    Venue:青山学院大学+オンライン   Country:Japan  

  • 微細構造を有するNiパターンの凝集現象を用いたサファイア基板上転写フリーグラフェン膜の作製

    高橋明空, 加藤一朗, 久保俊晴, 三好実人, 江川孝志

    第69回応用物理学会春季学術講演会  2022.03  日本応用物理学会

     More details

    Event date: 2022.03

    Language:Japanese   Presentation type:Poster presentation  

    Venue:青山学院大学+オンライン   Country:Japan  

  • ALDにより成膜したSiO2/Al2O3 2層絶縁膜を用いたノーマリーオフ型AlGaN/GaN MIS-HEMTの電気特性評価

    戸田圭太郎, 久保俊晴, 江川孝志

    電子情報通信学会11月研究会  電子情報通信学会

     More details

    Event date: 2021.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  • ALDにより成膜したSiO2/Al2O3 2層絶縁膜を用いたノーマリーオフ型AlGaN/GaN MIS-HEMTの電気特性

    戸田圭太郎, 久保俊晴, 江川孝志

    第82回応用物理学会秋季学術講演会  日本応用物理学会

     More details

    Event date: 2021.09

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン  

  • Pt/ALD-Al2O3/AlGaN/GaN MIS-HEMTの電気特性に及ぼすフォーミングガスアニールの効果Ⅲ

    久保俊晴, 吉田信輝, 江川孝志

    第68回応用物理学会春季学術講演会  日本応用物理学会

     More details

    Event date: 2021.03

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン  

  • 転写フリーグラフェンの結晶性に及ぼすNi金属触媒の結晶性の効果II

    高橋明空, 芝南々子, 久保俊晴, 三好実人, 江川孝志

    第68回応用物理学会春季学術講演会  日本応用物理学会

     More details

    Event date: 2021.03

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン  

display all >>

Industrial Property Rights

  • ゲート絶縁膜の形成方法、および、ゲート絶縁膜

    座間秀昭, 小林忠正, 久保俊晴, 江川孝志

     More details

    Application no:2017-20109  Date applied:2017.02

    Country of applicant:Domestic   Country of acquisition:Domestic

  • グラフェンデバイスおよびその製造方法

    三好実人, 久保俊晴, 江川孝志

     More details

    Application no:2015-212450  Date applied:2015.10

    Country of applicant:Domestic   Country of acquisition:Domestic

Awards

  • ISPlasma2017/IC-PLANTS2017 Best Presentation Award

    2017.03   ISPlasma2017/IC-PLANTS2017 Committee  

    N. Taoka, T. Kubo, T. Yamada, T. Egawa, M. Shimizu

     More details

    Award type:Award from international society, conference, symposium, etc.  Country:Japan

Scientific Research Funds Acquisition Results

  • 極微細金属パターン付き基板による高性能低消費電力グラフェンFETの作製

    2019.04 - 2022.03

    科学研究費補助金  基盤研究(C)

Other External Funds

  • 極微細金属パターン付き基板による高性能低消費電力グラフェンFETの作製

    2022.04 - 2023.03

    名古屋工業大学  学内研究推進経費 

      More details

    Authorship:Principal investigator 

    Grant amount:\2000000 ( Direct Cost: \2000000 )

  • Si基板上GaNパワーデバイスの性能を向上させるゲート構造用絶縁膜の開発

    2020.06 - 2021.03

    民間財団等  内藤科学技術振興財団 助成金 

      More details

    Grant type:Competitive

  • 極微細金属パターン付き基板を用いた高性能グラフェン FET の作製

    2019.04 - 2020.03

    民間財団等  村田財学術振興財団第35回学術助成金 

      More details

    Grant type:Competitive

  • 新しいグラフェン合成プロセスの開発とエネルギー利用効率化への展開

    2016.04 - 2017.03

    民間財団等  東燃ゼネラル石油研究奨励・奨学財団研究助成 

      More details

    Grant type:Competitive

    エネルギーの効率的な利用に向け、計算機で消費される電力の削減のため、2次元物質であるグラフェンデバイスの普及に向けたデバイス開発を
    行う。

Past of Commissioned Research

  • 低炭素社会を実現する次世代パワーエレクトロニクスプロジェクト/GaNパワーデバイス等の実用化加速技術開発

    2017.04 - 2020.03

    政府機関  General Consignment Study 

    江川孝志

      More details

    Authorship:Coinvestigator(s) 

Past of Cooperative Research

  • GaN-HEMTを高出力化するゲート絶縁膜プロセス開発に関する共同研究

    2016.04 - 2017.03

    株式会社アルバック  Collaboration in Japan 

      More details

    GaN-HEMTパワーデバイスの実現へ向け、良好な特性を有するゲート絶縁膜の開発をアルバックと共同して行う。

 

Committee Memberships

  • 電子情報通信学会電子デバイス研究会   委員  

    2018.04   

      More details

    Committee type:Academic society

  • 日本応用物理学会   IWN2018(金沢)実行委員会・現地実行委員  

    2016.10 - 2018.11   

      More details

    Committee type:Academic society

  • 日本応用物理学会   IWUMD2017(福岡)実行委員会・寄付/展示委員  

    2016.10 - 2017.11   

      More details

    Committee type:Academic society

  • 応用物理学会応用電子物性分科会   幹事  

    2014.04   

      More details

    Committee type:Other

  • ISPlasma2011実行委員会   実行委員  

    2010.11 - 2011.03   

      More details

    Committee type:Other

Social Activities

  • 計測分析に関する講演会

    Role(s): Lecturer

    あいち産業科学技術総合センター  あいち産業科学技術総合センター本部 講習会室  2016.12

     More details

    Audience: Researchesrs

    Type:Lecture