KUBO Toshiharu

写真a

Affiliation Department etc.

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering
Research Center for Nano-Device and next generation material

Title

Associate Professor

Graduating School

  • 1995.04
    -
    1999.03

    Keio University   Faculty of Science and Engineering   Department of applied physics and physico-informatics   Graduated

Graduate School

  • 1999.04
    -
    2005.05

    Keio University  Graduate School, Division of Science and Engineering  School of Fundamental Science and TechnologyDoctor's Course  Completed

Degree

  • Keio University -  Doctor(Engineering)

External Career

  • 2008.12
    -
    2010.03

    Hokkaido University   Research Center for Integrated Quantum Electronics   Part-time researcher for university or other academic organization  

  • 2005.10
    -
    2008.12

    The University of Tokyo   School of Engineering   Part-time researcher for university or other academic organization  

Field of expertise (Grants-in-aid for Scientific Research classification)

  • Electron device/Electronic equipment

  • Electronic materials/Electric materials

  • Applied materials

 

Research Career

  • Electronic states at insulator/GaN interface

    The Other Research Programs  

    Project Year:  2010.04  -  Now

    electronic properties at the insulator/GaN interface are investigated.

  • Surface properties of AlGaN layers with high Al compositions

    The Other Research Programs  

    Project Year:  2008.12  -  2010.03

    Surface properties of AlGaN layers with high Al compositions were studied.

  • Improvement of carbon compounds by fast neutron irradiation

    The Other Research Programs  

    Project Year:  2005.10  -  2008.12

    Improvement of physical properties of fullerene superconductor by fast neutron irradiation was studied.

  • Study on the electrical conductivity of Graphite

    The Other Research Programs  

    Project Year:  1998.04  -  2005.10

Papers

  • Improved field-effect mobility in transfer-free graphene films synthesized via the metal agglomeration technique using high-crystallinity Ni catalyst films

    Toshiharu Kubo, Akira Takahashi, Makoto Miyoshi, Takashi Egawa

    Applied Physics Express ( IOPscience )  14   116503   2021.10  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Bias-controlled photocurrent generation process in GaN-based ultraviolet p–i–n photodetectors fabricated with a thick Al2O3 passivation layer

    PradipDalapati, KosukeYamamoto, ToshiharuKubo, TakashiEgawa, MakotoMiyoshi

    Optik ( Elsevier )  245   167691   2021.07  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator

    Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, and Makoto Miyoshi

    Journal of Vacuum Science & Technology B   37   041205-1 - 041205-4   2019.07  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 fabricated by atomic layer deposition

    Toshiharu Kubo, Takashi Egawa

    Physica B   571   210 - 212   2019.07  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Trap state characterization of Al2O3/AlInGaN/GaN metal-insulator-semiconductor heterostructures

    Debaleen Biswas, Naoki Torii, Hirotaka Fujita, Takahiro Yoshida, Toshiharu Kubo and Takashi Egawa

    Semiconductor Science and Technology   34   055014-1 - 055014-6   2019.04  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Experimental evidence of the existence of multiple charged states at Al2O3/GaN interfaces

    Noriyuki Taoka, Toshiharu Kubo, Toshikazu Yamada, Takashi Egawa and Mitsuaki Shimizu

    Semiconductor science and Technology   34   025009-1 - 025009-7   2019.01  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

    N. Taoka, T. Kubo, T. Yamada, T. Egawa, M. Shimizu

    Jpn. J. Appl. Phys.   57   01AD04-1 - 01AD04-5   2017.12  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing

    Toshiharu Kubo, Takashi Egawa

    Semiconductor Science and Technology   32   125016-1 - 125016-5   2017.11  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductor

    N. Taoka, T. Kubo, T. Yamada, T. Egawa, M. Shimizu

    Microelectronic Engineering   178   182 - 185   2017.06  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Post-deposition annealing effects on the insulator/semiconductor interfaces of Al2O3/AlGaN/GaN structures on Si substrates

    T. Kubo, M. Miyoshi, T. Egawa

    Semiconductor Science and Technology   32   065012-1 - 065012-5   2017.05  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

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Presentations

  • Estimation of Electrical Properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 Double Insulators Fabricated by ALD

    Shunichi Yokoi, Toshiharu Kubo, Takashi Egawa

    ISPlasma2021  (オンライン)  2021.03  -  2021.03  日本応用物理学会

  • Effect of crystal quality of Ni metal catalyst on electrical properties of transfer-free graphene FETs

    Motoki Kobayashi, Bilguun Dorjdagva, Toshiharu Kubo, Makoto Miyoshi, and Takashi Egawa

    ISPlasma2020  (Nagoya University)  2020.03  -  2020.03  JSAP

  • Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double-layer insulators fabricated by atomic layer deposition

    Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, and Takashi Egawa

    ISPlasma2020  (Nagoya University)  2020.03  -  2020.03  JSAP

  • Estimation of post-deposition annealing effects on electrical properties of ALD-SiO2/AlGaN/GaN MIS-HEMTs

    S. Yokoi, T. Kubo, T. Egawa

    SSDM2019  (Nagoya university, Aichi, Japan)  2019.09  -  2019.09  JSAP

  • Reduction in ohmic contact resistance for AlGaN-channel HFETs with a quaternary AlGaInN barrier layer

    S. Saito, D. Hosomi, K. Furuoka, H. Chen, T. Kubo, T. Egawa, and M. Miyoshi

    TWHM2019  (Hotel Grand Terrace Toyama, Toyama, Japan)  2019.08  -  2019.08  JSAP

  • Effects of forming gas annealing depending on gate electrode materials in ALD-Al2O3/AlGaN MIS-HEMT

    Nobuki Yoshida, Keita Furuoka, Toshiharu Kubo, and Takashi Egawa

    TWHM2019  (Hotel Grand Terrace Toyama, Toyama, Japan)  2019.08  -  2019.08  JSAP

  • Device characteristics and MIS interface evaluation of Al2O3/AlGaInN/AlGaN MISHFET

    Saki Saito, Daiki Hosomi, Keita Furuoka, Heng Chen, Toshiharu Kubo, Takashi Egawa, and Makoto Miyoshi

    CSW2019  (Kasugano International Forum, Nara, Japan)  2019.05  -  2019.05  JSAP

  • Effect of Forming Gas Annealing Conditions on Electrical Properties of ALD-Al2O3/AlGaN/GAN MIS-HEMTs

    Keita Furuoka, Toshiharu Kubo, Makoto Miyoshi and Takashi Egawa

    ISPlasma2019  (Nagoya Institute of Technology, Nagoya, Japan)  2019.03  -  2019.03  JSAP

  • Fabrication of Transfer-free Graphene FETs with ALD-Al2O3 Layers as the Gate Insulator

    Motoki Kobayashi, Bilguum Dorjdagva, Toshiharu Kubo, Mokoto Miyoshi and Takashi Egawa

    ISPlasma2019  (Nagoya Institute of Technology, Nagoya, Japan)  2019.03  -  2019.03  JSAP

  • Photo Response Measurement for Transfer-free Multilayer Graphene Films Prepared Utilizing Catalyst Metal Agglomeration Technique

    Bilguun Dorjdagva, Motoki Kobayashi, Toshiharu Kubo, Makoto Miyoshi and Takashi Egawa

    ISPlasma2019  (Nagoya Institute of Technology, Nagoya, Japan)  2019.03  -  2019.03  JSAP

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