KUBO Toshiharu

写真a

Affiliation Department etc.

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering
Research Center for Nano-Device and next generation material

Title

Assistant Professor

 

Papers

  • Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing

    Toshiharu Kubo, Takashi Egawa

    Semiconductor Science and Technology   32   125016-1 - 125016-2   2017.11  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductor

    N. Taoka, T. Kubo, T. Yamada, T. Egawa, M. Shimizu

    Microelectronic Engineering   178   182 - 185   2017.06  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Post-deposition annealing effects on the insulator/semiconductor interfaces of Al2O3/AlGaN/GaN structures on Si substrates

    T. Kubo, M. Miyoshi, T. Egawa

    Semiconductor Science and Technology   32   065012-1 - 065012-5   2017.05  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Self-forming graphene/Ni patterns on sapphire utilizing the pattern-controlled catalyst metal agglomeration technique

    M. Miyoshi, Y. Arima, T. Kubo, T. Egawa

    Appl. Phys. Lett.     2017.01  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Influence of AlN nucleation layer on vertical breakdown characteristics for GaN‐on‐Si

    J. J. Freedsman, A. Watanabe, Y. Yamaoka, T. Kubo, T. Egawa

    physica status solidi (a)   213 ( 2 ) 424 - 428   2015.11  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

    Makoto Miyoshi, Masaya Mizuno, Yukinori Arima, Toshiharu Kubo, Takashi Egawa, Tetsuo Soga

    Applied Physics Letters     2015.08  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates (共著)

    Toshiharu Kubo, Joseph J. Freedsman, Yusuke Yoshida, and Takashi Egawa

    Japanease Journal of Applied Physics   54   020301-1 - 020301-4   2015.01  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Normally-off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge compensation δ-doped GaN cap layer (共著)

    Akio Wakejima, Akihiro Ando, Arata Watanabe, Keita Inoue, Toshiharu Kubo, Yamato Osada, Ryuichiro Kamimura, and Takashi Egawa

    Applied Physics Express   8   026502-1 - 026502-4   2015.01  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Study on transfer-free graphene synthesis process utilizing spontaneous agglomeration of catalytic Ni and Co metals (共著)

    Makoto Miyoshi, Masaya Mizuno, Kazuya Banno, Toshiharu Kubo, Takashi Egawa, and Tetsuo Soga

    Materials Research Express   2   015602-1 - 015602-8   2015.01  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Electrical properties of GaN-based metal–insulator–semiconductor structures with Al2O3 deposited by atomic layer deposition using water and ozone as the oxygen precursors (共著)

    Toshiharu Kubo, Joseph J Freedsman, Yasuhiro Iwata, and Takashi Egawa

    Semiconductor Science and Technology   29 ( 4 ) 045004-1 - 045004-6   2014.02  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

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Presentations

  • ESR studies of layer thickness and post-deposition annealing effects on ALD-Al2O3/AlGaN/GaN MIS-HEMT structures

    T. Kubo, T. Egawa

    SISC 2017  (San Diego, USA)  2017.12  -  2017.12  IEEE

  • Relationships between Al2O3/GaN Interface Properties near Conduction Band Edge and Post-Deposition Annealing Temperatures

    N. Taoka, T. Kobayashi, M. Nakamura, T. Sagawa, N. X. Truyen, A. Ohta, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, T. Kubo, T. Yamada, T. Egawa, S. Miyazaki, S. Motoyama, M. Shimizu

    SISC 2017  (San Diego, USA)  2017.12  -  2017.12  IEEE

  • Impacts of oxidants for ALD process on Al2O3/GaN interface properties

    N. Taoka, T. Kubo, T. Yamada, T. Egawa, M. Shimizu

    ISPlasma2017  (Chubu university)  2017.03  -  2017.03  The Japan Society of Applied Physics

  • Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 and HfO2 fabricated by atomic layer deposition

    Toshiharu Kubo, Takashi Egawa

    SISC2016  (San Diego)  2016.12  -  2016.12  IEEE

  • Large Surface Potential Fluctuation at ALD-Al2O3/GaN MOS Interfaces

    N. Taoka, T. Kubo, T. Yamada, T. Egawa, and M. Shimizu

    SISC2016  (Sandiego)  2016.12  -  2016.12  IEEE

  • Effect of Post-deposition Annealing on Threshold Voltage and Interface States

    Toshiharu Kubo, Gosuke Nishino, Takashi Egawa

    SISC2015  (Washington DC)  2015.12  -  2015.12  IEEE

  • Analysis of Post-Deposition Annealing Effects on Insulator/Semiconductor Interface of Al2O3/AlGaN/GaN High-Electron-Mobility Transistors on Si Substrates

    Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa

    SSDM2015  (Sapporo Convention Center)  2015.09  -  2015.09  The Japan Society of Applied Physics

  • Effect of post-deposition annealing on threshold voltage and interface states in ALD-Al2O3/AlGaN/GaN MIS-HEMTs on Si substrates

    Toshiharu Kubo, Yusuke Yoshida, and Takashi Egawa

    SISC2014  2014.12  -  2014.12 

  • Reduction of initial threshold voltage shift in ALD-Al2O3/AlGaN/GaN MIS-HEMTs on Si substrates by post-deposition annealing

    Toshiharu Kubo, Joseph J. Freedsman, Yusuke Yoshida, and Takashi Egawa

    SSDM2014  2014.09  -  2014.09 

  • Formation of Graphene Layer on SiO2/Si(111) with Co Catalyst

    Masaya Mizuno, Kazuya Banno, Takashi Egawa, Toshiharu Kubo, Makoto Miyoshi, and Tetsuo Soga

    ISPlasma2014  2014.03  -  2014.03 

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