WAKEJIMA Akio

写真a

Affiliation Department etc.

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering

Title

Associate Professor

 

Papers

  • Impact of Film Stress of Field-Plate Dielectric on Electric Characteristics of GaN-HEMTs

    Yuji Ando; Hidemasa Takahashi; Qiang Ma; Akio Wakejima; Jun Suda

    IEEE Transactions on Electron Devices     2020.10  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Polarization engineering via InAlN/AlGaN heterostructures for demonstration of normally-off AlGaN channel field effect transistors

    Lei Lia, Ryohei Yamaguchi, and Akio Wakejima

    Applied Physics Letters ( AIP )  117 ( 15 ) 152108   2020.10  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Transient response of drain current following biasing stress in GaN HEMTs on SiC substrates with a field plate

    Qiang Ma, Tomoyo Yoshida, Yuji Ando and Akio Wakejima

    Japanese Journal of Applied Physics ( JJAP )  59 ( 10 ) 101002   2020.09  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer

    Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura, Akio Wakejima

    IEEE Electron Device Letters ( IEEE )  41 ( 10 ) 1480 - 1483   2020.08  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Bonding GaN on high thermal conductivity graphite composite with adequate interfacial thermal conductance for high power electronics applications

    Lei Lia, Aozora Fukui, and Akio Wakejima

    Applied Physics Letters ( AIP )  116 ( 14 ) 142105   2020.04  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Analysis of carrier trapping and emission in AlGaN/GaN HEMT with bias-controllable field plate

    Suguru Mase, Akio Wakejima and Takashi Egawa

    physica status solidi (a) ( Wiley )    2017.08  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • An AlGaN/GaN field effect diode with a high turn-on voltage controllability

    Naoki Kato, Akio Wakejima, Yamato Osada, Ryuichiro Kamimura, Kenji Itoh and Takashi Egawa

    physica status solidi (a)   214 ( 8 )   2017.08  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Distortion in Difference Frequency Under Two-Tone Signal Input Evaluated with Volterra Series Analysis

    K. Tamesue, T. Egawa, A. Wakejima

    Digest of 2016 Compound Semicondutor IC Symposium     2016.10

    Research paper (international conference proceedings)   Multiple Authorship

  • Analysis of Carrier Trapping and Emission in AlGaN/GaN HEMT with Bias-Controllable Field Plate

    Suguru Mase, Akio Wakejima, Takashi

    Digest of 2016 International Workshop on Nitride Semiconductors     2016.10  [Refereed]

    Research paper (international conference proceedings)   Multiple Authorship

  • An AlGaN/GaN Field Effect Diode with a High Turn-On Voltage Controllability

    Naoki Kato, Takaya Nagai, Akio Wakejima, Yamato Osada, Ryuichiro Kamimura, Kenji Itou, Takashi Egawa

    Digest of 2016 International Workshop on Nitride Semiconductors     2016.10  [Refereed]

    Research paper (international conference proceedings)   Multiple Authorship

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Presentations

  • Gated-Anode AlGaN/GaN Diode for Microwave Wireless Power Transfer

    Akio Wakejima

    2021 Taiwan Wireless Power Transfer International Workshop  2021.09  -  2021.09 

  • Gated-Anode GaN HEMT Based Diode for Microwave Wireless Power Transfer

    Akio Wakejima

    Wireless Power Week 2020  2020.11  -  2020.11 

  • Effect of Thick Nitride Layer on The RF Performance in GaN HEMTs on 3C-SiC/Si

    Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura, Akio Wakejima

    2020 International Conference on Solid State Devices and Materials  2020.09  -  2020.09 

  • Effect of High Temperature on Electron Trapping Behavior of GaN HEMTs on SiC Substrates with Field Plate

    Qiang Ma、Yuji Ando、Akio Wakejima

    67回応用物理学会春季学術講演会  2020.03  -  2020.03 

  • AlGaN/GaN Field-Effect Diode for High Frequency Rectification

    Y.Ito, Y.Ikedo, N.Kato, J.Sumino, T.Egawa, R.Kamimura, Y.Osada, K.Ito, and A.Wakejima

    12th Topical Workshop on Heterostructure Microelectronics  2017.08  -  2017.08 

  • Microwave Leakage through Buffer Layer of AlGaN/GaN HEMT on Si

    Y. Ikedo, Y. Ito, T.Egawa, M.Kuzuhara, K.Hosoya, and A. Wakejima

    12th International Conference on Nitride Semiconductors ...  2017.07  -  2017.07 

  • 透明ゲートAlGaN/GaN HEMTを用いたゲート電極直下の変動要因探査

    成田 知隆, 分島 彰男, 江川 孝志

    2013年春季第60回応用物理学関係連合講演会  2013.03  -  2013.03 

  • Estimation of bound interface density of AlInN/GaN hetero-structures

    O. Oda, A. Wakejima, M. Miyoshi, T. Egawa

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials  2013.01  -  2013.02 

  • Transition of High Electric Field of AlGaN/GaN HEMTs on Si observed by Photo Emission

    Akio Wakejima, A. Frank Wilson, Takuya Joka, and Takashi Egawa

    International Workshop on Nitride Semiconductors  2012.10  -  2012.10 

  • 透明ゲートAlGaN/GaN HEMTを用いたゲート電極直下でのEL発光観察

    成田 知隆,間瀬 駿, 分島 彰男,江川 孝志

    2012年秋季第73回応用物理学会学術講演会  2012.09  -  2012.09 

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